Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

Abstract

Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for Be–As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the optical response time on Be doping and annealing is attributed to changes in the As antisite concentration and the compensation effect of the Be.