2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications

Myoung‐Jae Lee, Youngsoo Park, B. S. Kang, +11

Non-volatile MemoryEngineeringCurrent DensitySemiconductorsHigh Density +15

A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

Seong-Geon Park, Min Kyu Yang, Hyunsu Ju, +10

Non-volatile MemoryElectrical EngineeringEngineeringSub-1μa Ultralow OperatingA Ultralow Operating +11

Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications

Hong Sik Yoon, In-Gyu Baek, Jinshi Zhao, +7

Symposium on VLSI Technology

Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsEmerging Memory Technology +10

2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory

Min-Woong Seo, Hyun-Yong Jung, Suksan Kim, +21

IEEE Journal of Solid-State Circuits

Dram CapacitorsEngineeringPixel-level AdcData ConverterMixed-signal Integrated Circuit +11

One-Dimensional Thickness Scaling Study of Phase Change Material $(\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5})$ Using a Pseudo 3-Terminal Device

Sang‐Bum Kim, Byoung-Jae Bae, Yuan Zhang, +6

IEEE Transactions on Electron Devices

Non-volatile MemoryEngineeringEmerging Memory TechnologyPseudo 3-Terminal DevicePhase Change Memory +15

5.5 A 2.1e⁻ Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

Jaekyu Lee, Seung Sik Kim, In-Gyu Baek, +25

Electrical EngineeringAi IndustriesEngineeringPhotoelectric SensorImage Processor +6

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

Min-Woong Seo, Hyun-Yong Jung, Suksan Kim, +21

A 140 dB Single-Exposure Dynamic-Range CMOS Image Sensor with In-Pixel DRAM Capacitor

Youngsun Oh, Lim Jungwook, Soeun Park, +19

2022 International Electron Devices Meeting (IEDM)

EngineeringIn-pixel Dram CapacitorData ConverterMixed-signal Integrated CircuitComputer Engineering +7

Enhanced LiMn₂O₄ cathode performance in lithium-ion batteries through synergistic cation and anion substitution

Oyunbayar Nyamaa, Hyomin Jeong, Gyeong-Ho Kang, +6

Materials Advances

EngineeringSpinel Limn 2ChemistryChemical EngineeringMaterials Science +15

1D thickness scaling study of phase change material (Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>) using a pseudo 3-terminal device

Byoung-Jae Bae, Sang‐Bum Kim, Yuan Zhang, +8

Materials ScienceElectrical EngineeringPhase TransitionsEngineeringMicrofabrication +9