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Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications
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2006
Year
Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsEmerging Memory TechnologyApplied PhysicsComputer ArchitectureComputer EngineeringBipolar Switching ModeMemory DeviceSemiconductor MemorySeveral IssuesMicroelectronicsPhase Change MemoryVertical Cross-point Architecture
Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.