Symposium on VLSI Technology · 2006 · 44 citations · 0 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyMemory DevicesMemristive MaterialsMemory MaterialsMemristive MemoryNon-volatile MemoryNon-volatile Memory DesignNonvolatile Memory MaterialsResistive Random-access Memory
Vertically defined resistance change memory cells for the vertical cross-point architecture (VCPA) as a high density non-volatile memory application are successfully demonstrated with a NiO switching layer. They showed both unipolar and bipolar switching mode. Several issues in realization for VCPA and their possible solutions are discussed.