K. Kanzaki

Introducing redundancy in field programmable gate arrays

F. Hatori, T. Sakurai, K. Nogami et al. · 2002 · 78 citations

Engineering, Computer Engineering, Computer Science +12

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

Y. Toyoshima, Hiroshi Iwai, F. Matsuoka et al. · IEEE Transactions on Electron Devices · 1990 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Interface state generation under long-term positive-bias temperature stress for a p/sup +/ poly gate MOS structure

Y. Hiruta, Hiroshi Iwai, F. Matsuoka et al. · IEEE Transactions on Electron Devices · 1989 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Electromigration reliability for a tungsten-filled via hole structure

F. Matsuoka, Hiroshi Iwai, K. Hama et al. · IEEE Transactions on Electron Devices · 1990 · 28 citations

Engineering, Electrical Engineering, Materials Science +16

Increase of resistance to hot carriers in thin oxide MOSFETS

Masahiro Yoshida, Daisuke Tohyama, K. Maeguchi et al. · 1985 · 24 citations

Engineering, Electrical Engineering, Microelectronics +16