J.A. Ng

Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current–voltage and capacitance–voltage measurements

Banani Sen, Hei Wong, Hiroshi Iwai et al. · Solid-State Electronics · 2007 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +16

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

J.A. Ng, Yusuke Kuroki, Nobuyuki Sugii et al. · Microelectronic Engineering · 2005 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +16

32nm gate-first high-k/metal-gate technology for high performance low power applications

C.H. Diaz, Kenichi Gotō, H.T. Huang et al. · 2008 · 36 citations

Engineering, Electrical Engineering, Low-power Design +10

Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond

Chih‐Hao Chang, Vincent S. Chang, K.H. Pan et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +16

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

J.A. Ng, Nobuyuki Sugii, Kuniyuki Kakushima et al. · IEICE Electronics Express · 2006 · 13 citations · Full text

Engineering, Electrical Engineering, Materials Science +16