H.T. Huang

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

Kaisen Yang, H.T. Huang, M.J. Chen et al. · IEEE Transactions on Electron Devices · 2001 · 54 citations

Electrical Engineering, Engineering, Drain Extension +10

A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications

Chung-Cheng Wu, Yuet‐Kin Leung, C. S. Chang et al. · 2003 · 46 citations

Engineering, Vlsi Design, Power Electronics +17

65nm CMOS high speed, general purpose and low power transistor technology for high volume foundry application

S.K.H. Fung, H.T. Huang, Sheng-Jen Cheng et al. · 2004 · 45 citations · Full text

Low-power Electronics, Electrical Engineering, Engineering +15

32nm gate-first high-k/metal-gate technology for high performance low power applications

C.H. Diaz, Kenichi Gotō, H.T. Huang et al. · 2008 · 36 citations

Low-power Electronics, Electrical Engineering, Semiconductor Device +14

45nm High-k/Metal-Gate CMOS Technology for GPU/NPU Applications with Highest PFET Performance

H.T. Huang, Y.C. Liu, Y.T. Hou et al. · 2007 · 12 citations

Sub Xmlns, Engineering, Vlsi Design +18