C.S. Liang

A 7nm CMOS platform technology featuring 4^th generation FinFET transistors with a 0.027um² high density 6-T SRAM cell for mobile SoC applications

Shien-Yang Wu, C.Y. Lin, M.C. Chiang et al. · 2016 · 129 citations

Engineering, Computer Engineering, Electrical Engineering +13

A 3nm CMOS FinFlex™ Platform Technology with Enhanced Power Efficiency and Performance for Mobile SoC and High Performance Computing Applications

Shien-Yang Wu, M.C. Chiang, C.Y. Lin et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 56 citations

Engineering, Electrical Engineering, High-performance Computing +17

Critical Process Features Enabling Aggressive Contacted Gate Pitch Scaling for 3nm CMOS Technology and Beyond

Chih‐Hao Chang, Vincent S. Chang, K.H. Pan et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +16

The performance limiting factors as RF MOSFETs scale down

Yung‐Hsien Wu, Albert Chin, C.S. Liang et al. · 2002 · 28 citations

Engineering, Electrical Engineering, Microelectronics +15