T.-C. Hong

Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrO<inf>x</inf> on specific interfacial layers exhibiting 65% S.S. reduction and improved I<inf>ON</inf>

C.-J. Su, Ying–Tsan Tang, Y.-C. Tsou et al. · 2017 · 31 citations

Sub Xmlns, Engineering, Ge Nfinfet +16

Ge nanowire FETs with HfZrO<inf>x</inf> ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

Chun-Jun Su, T.-C. Hong, Y.-C. Tsou et al. · 2017 · 19 citations

Materials Science, Semiconductors, Electrical Engineering +14

Ge FinFET CMOS Inverters With Improved Channel Surface Roughness by Using <i>In-Situ</i> ALD Digital O₃ Treatment

Mu-Shih Yeh, Guang-Li Luo, Fu-Ju Hou et al. · IEEE Journal of the Electron Devices Society · 2018 · 18 citations · Full text

Low-power Electronics, Electrical Engineering, Engineering +9

Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

P.-J. Sung, Chun‐Yen Chang, L.-Y. Chen et al. · 2018 · 15 citations

3D Ic Architecture, Electrical Engineering, Engineering +13

High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

Y.-J. Lee, T.-C. Hong, Fu-Kuo Hsueh et al. · 2016 · 13 citations

Materials Science, Electrical Engineering, Ion Implantation +15