Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki, +6

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNuclear PhysicsPhysics +11

Donor-related recombination processes in hydride-vapor-phase epitaxial GaN

J. A. Freitas, W. J. Moore, B. V. Shanabrook, +4

Physical review. B, Condensed matter

PhotoluminescenceEngineeringPhysicsDonor-related RecombinationNanoelectronics +13

β- Ga 2 O 3 nanowires synthesized from milled GaN powders

B. C. Kim, Kerryming Sun, K. S. Park, +7

Applied Physics Letters

Materials EngineeringMaterials ScienceEngineeringElectron MicroscopyNanomaterials +11

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

M. A. Reshchikov, H. Morkoç̌, S. S. Park, +1

Applied Physics Letters

Dominant AcceptorCharge StatesElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Yellow and green luminescence in a freestanding GaN template

M. A. Reshchikov, H. Morkoç, S. S. Park, +1

Applied Physics Letters

SemiconductorsWide-bandgap SemiconductorSolid-state LightingEngineeringYellow Luminescence +10

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

Daming Huang, Feng Yun, M. A. Reshchikov, +8

Solid-State Electronics

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics +4

Recombination of excitons bound to oxygen and silicon donors in freestanding GaN

A. Wysmołek, K.P. Korona, R. Stępniewski, +8

Physical review. B, Condensed matter

Wide-bandgap SemiconductorSemiconductor TechnologyPhotoluminescenceEngineeringPhysics +12

Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaN

W. J. Moore, Jaime A. Freitas, S. K. Lee, +2

Physical review. B, Condensed matter

Wide-bandgap SemiconductorDonor ExcitationGround StateOptical MaterialsEngineering +12

Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

M. A. Reshchikov, Daming Huang, Feng Yun, +5

Applied Physics Letters

SemiconductorsExcitonic TransitionsElectrical EngineeringOptical MaterialsFreestanding Gan Template +13

Characterization of free-standing hydride vapor phase epitaxy GaN

Jacek B. Jasiński, W. Swider, Z. Liliental‐Weber, +7

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +9