S. S. Park

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

J. Oila, Jani Kivioja, V. Ranki et al. · Applied Physics Letters · 2003 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Donor-related recombination processes in hydride-vapor-phase epitaxial GaN

J. A. Freitas, W. J. Moore, B. V. Shanabrook et al. · Physical review. B, Condensed matter · 2002 · 96 citations

Photoluminescence, Engineering, Physics +15

β- Ga 2 O 3 nanowires synthesized from milled GaN powders

B. C. Kim, Kerryming Sun, K. S. Park et al. · Applied Physics Letters · 2002 · 86 citations

Materials Engineering, Materials Science, Engineering +13

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

M. A. Reshchikov, H. Morkoç̌, S. S. Park et al. · Applied Physics Letters · 2002 · 80 citations

Dominant Acceptor, Charge States, Electrical Engineering +15

Yellow and green luminescence in a freestanding GaN template

M. A. Reshchikov, H. Morkoç, S. S. Park et al. · Applied Physics Letters · 2001 · 74 citations

Semiconductors, Wide-bandgap Semiconductor, Solid-state Lighting +12