Hai Dang Trinh

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Hai Dang Trinh, E.Y. Chang, Pu‐Wei Wu et al. · Applied Physics Letters · 2010 · 105 citations · Full text

Materials Science, Materials Engineering, Aluminium Nitride +15

Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Chen-Peng Chang, T.H. Hsu, Edward Yi Chang et al. · Electronics Letters · 2010 · 41 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Electrical Characteristics of n, p-In_0.53Ga_0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh et al. · IEEE Transactions on Electron Devices · 2014 · 39 citations

Wide-bandgap Semiconductor, Engineering, Plasma Physics +16

Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments

Hai Dang Trinh, Guy Brammertz, Edward Yi Chang et al. · IEEE Electron Device Letters · 2011 · 29 citations

Aluminium Nitride, Engineering, Inas Band Gap +18

Band Alignment Parameters of Al₂O₃/InSb Metal–Oxide–Semiconductor Structure and Their Modification with Oxide Deposition Temperatures

Hai Dang Trinh, Nguyễn Minh Thủy, Yueh Chin Lin et al. · Applied Physics Express · 2013 · 19 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +15