Hai Dang Trinh - Concepedia

Author

Hai Dang Trinh

National Yang Ming Chiao Tung University

Also Known As

H D Trinh, H. D. Trinh, H.-D. Trinh, H.D Trinh, Hai Dang Trinh, Hue Trinh, Hải Trịnh

Publications

282

Citations

H-Index

Concepts

All Affiliations

National Yang Ming Chiao Tung University Tokyo Institute of Technology Taiwan Semiconductor Manufacturing Company (Taiwan)

About

Hai Dang Trinh is an author at National Yang Ming Chiao Tung University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	262
2	Applied Physics	7	7	262
3	Electrical Engineering	5	5	141
4	Chemistry	2	2	45
5	Chemical Engineering	1	1	29

Hai Dang Trinh

Publications

262

Citations

H-Index

Page 1

	Year	Citations
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor Hai Dang Trinh, E.Y. Chang, Pu‐Wei Wu, Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideEngineeringWet Sulfide	2010	105
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage Chen-Peng Chang, T.H. Hsu, Edward Yi Chang, Electronics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringMetal-oxide-semiconductor Gate ArchitectureNanoelectronics	2010	41
Electrical Characteristics of n, p-In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer Quang Ho Luc, Edward Yi Chang, Hai Dang Trinh, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPlasma PhysicsChemical DepositionDifferent Plasma Powers	2014	39
Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments Hai Dang Trinh, Guy Brammertz, Edward Yi Chang, IEEE Electron Device Letters Aluminium NitrideEngineeringInas Band GapChemistryChemical Deposition	2011	29
Band Alignment Parameters of Al<sub>2</sub>O<sub>3</sub>/InSb Metal–Oxide–Semiconductor Structure and Their Modification with Oxide Deposition Temperatures Hai Dang Trinh, Nguyễn Minh Thủy, Yueh Chin Lin, Applied Physics Express Materials ScienceOxide HeterostructuresElectrical EngineeringOxide Deposition TemperaturesEngineering	2013	19
Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures Yueh Chin Lin, Hai Dang Trinh, Ting Wei Chuang, IEEE Electron Device Letters Materials EngineeringMaterials Science\Rm LaMaterial AnalysisComposite Oxide	2013	16
Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures Hai Dang Trinh, Yueh Chin Lin, Edward Yi Chang, IEEE Transactions on Electron Devices Aluminium NitrideEngineering\Rm OOxide DepositionDifferent Postdeposition Annealing	2013	13

Page 1