E.Y. Chang

The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

Hai Dang Trinh, E.Y. Chang, Pu‐Wei Wu et al. · Applied Physics Letters · 2010 · 105 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

C.H Chiang, K. M. Chen, Yung‐Hsien Wu et al. · Applied Surface Science · 2010 · 31 citations

Engineering, Materials Engineering, Materials Science +15

Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Y.-C. Lin, Hiroshi Yamaguchi, E.Y. Chang et al. · Applied Physics Letters · 2007 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced lateral heat dissipation packaging structure for GaN HEMTs on Si substrate

Stone Cheng, Po-Chien Chou, Wei-Hua Chieng et al. · Applied Thermal Engineering · 2012 · 19 citations

Engineering, Electrical Engineering, Materials Science +14

A GaAs/AlAs Wet Selective Etch Process for the Gate Recess of GaAs Power Metal-Semiconductor Field-Effect Transistors

E.Y. Chang, Yeong Lin Lai, Yuan-Heng Lee et al. · Journal of The Electrochemical Society · 2001 · 13 citations

Engineering, Electrical Engineering, Materials Science +17