Noh-Jung Kwak

Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

Jin-Hyock Kim, Deok-Sin Kil, Seung-Jin Yeom et al. · Applied Physics Letters · 2007 · 51 citations

Engineering, Thin Film Process Technology, Chemistry +16

Highly Scalable Saddle-Fin (S-Fin) Transistor for Sub-50nm DRAM Technology

Sung-Wook Park, Sung-Joo Hong, Jin Woong Kim et al. · 2006 · 46 citations

Electrical Engineering, Engineering, Vlsi Design +10

A Comparative Study of the Atomic-Layer-Deposited Tungsten Thin Films as Nucleation Layers for W-Plug Deposition

Soo‐Hyun Kim, Noh-Jung Kwak, Jin Woong Kim et al. · Journal of The Electrochemical Society · 2006 · 32 citations · Full text

Gate-first high-k/metal gate DRAM technology for low power and high performance products

Minchul Sung, Se‐Aug Jang, Hyunjin Lee et al. · 2015 · 27 citations

Low-power Electronics, Low Power, Electrical Engineering +14

Characteristics of ALD Tungsten Nitride Using B2H6, WF6, and NH3 and Application to Contact Barrier Layer for DRAM

Soo‐Hyun Kim, Jun-Ki Kim, Ju Hee Lee et al. · Journal of The Electrochemical Society · 2007 · 26 citations