G. Martin

Recessed gate GaN MODFETs

Jinwook Burm, W. J. Schaff, G. Martin et al. · Solid-State Electronics · 1997 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers

Rao Tatavarti, Andree Wibowo, G. Martin et al. · 2010 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Lightweight, low cost GaAs solar cells on 4″ epitaxial liftoff (ELO) wafers

Rao Tatavarti, G. Hillier, A. Dzankovic et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 2008 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications

B. Pereiaslavets, G. Martin, L.F. Eastman et al. · IEEE Transactions on Electron Devices · 1997 · 21 citations

Engineering, Electrical Engineering, Physics +12

Large-signal relaxation-time model for HEMTs and MESFETs

M. Foisy, Paul E. Jeroma, G. Martin · 2003 · 21 citations

Engineering, Electrical Engineering, Circuit Theory +16