2010 · 35 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsSolar RadiationCurrent DensityDevice EfficiencyHeterojunction Solar CellsOpen-circuit VoltagePhotovoltaic EfficiencyPhotovoltaic Performance AnalysisShort-circuit CurrentSolar Cell Characterization
InGaP/GaAs/InGaAs inverted metamorphic (IMM) triple junction (TJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO IMM solar cells exhibited an efficiency of 30% at one sun AM1.5D illumination, which is the highest reported efficiency for IMM ELO thin cells to date. The TJ ELO cells had fill factor (FF) >85%, open circuit voltage (Voc) of 2.78V, and short circuit current density (Jsc) of 12.64 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . IMM ELO cells exhibited a peak efficiency of 36.3% at concentration of 264suns.
6
26.1% thin-film GaAs solar cell using epitaxial lift-off
G.J. Bauhuis, P. Mulder, E.J. Haverkamp et al. · Solar Energy Materials and Solar Cells · 2009 · 315 citations · Full text
A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
J. M. Olson, Sarah Kurtz, A. Kibbler et al. · Applied Physics Letters · 1990 · 310 citations
High efficiency InGaP/InGaAs tandem solar cells on Ge substrates
Tatsuya Takamoto, Takaaki Agui, Eiji Ikeda et al. · 2002 · 23 citations