InGaP/GaAs/InGaAs inverted metamorphic (IMM) solar cells on 4″ epitaxial lifted off (ELO) wafers

Abstract

InGaP/GaAs/InGaAs inverted metamorphic (IMM) triple junction (TJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO IMM solar cells exhibited an efficiency of 30% at one sun AM1.5D illumination, which is the highest reported efficiency for IMM ELO thin cells to date. The TJ ELO cells had fill factor (FF) >85%, open circuit voltage (Voc) of 2.78V, and short circuit current density (Jsc) of 12.64 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . IMM ELO cells exhibited a peak efficiency of 36.3% at concentration of 264suns.