D.F. Downey

Metastable boron active concentrations in Si using flash assisted solid phase epitaxy

S. H. Jain, Peter B. Griffin, J.D. Plummer et al. · Journal of Applied Physics · 2004 · 31 citations

Engineering, Cubic Boron Nitride, Silicon On Insulator +20

Low Resistance, Low-Leakage Ultrashallow p<tex>$^+$</tex>-Junction Formation Using Millisecond Flash Anneals

S. H. Jain, Peter B. Griffin, J.D. Plummer et al. · IEEE Transactions on Electron Devices · 2005 · 31 citations

Solid Phase, Engineering, Junction Formation +16

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

W. Lerch, Michael Glück, N. A. Stolwijk et al. · Journal of The Electrochemical Society · 1999 · 18 citations

Materials Science, Semiconductors, Semiconductor Technology +14

Fluorine effect on boron diffusion: chemical or damage?

J. Liu, D.F. Downey, K. S. Jones et al. · 2002 · 14 citations

Materials Science, Ion Implantation, Boron Diffusion +13

Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions

W. Lerch, S. Paul, F. Cristiano et al. · Journal of The Electrochemical Society · 2005 · 12 citations