Hitoshi Ishimori

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Publications

Citations

157

H-Index

Active since

2013

Affiliations

National Institute of Advanced Industrial Science and Technology(Current)

Fuji Electric (Japan)

Hitoshi Ishimori is an author at National Institute of Advanced Industrial Science and Technology specializing in semiconductor devices, engineering, and electrical engineering.

Publications per year

2013–2016

Publications

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada et al. · Journal of Applied Physics · 2015 · 64 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Shuji Katakami, Hiroyuki Fujisawa, Kensuke Takenaka et al. · Materials science forum · 2013 · 40 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada et al. · Japanese Journal of Applied Physics · 2016 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

Mitsuru Sometani, Dai Okamoto, Shinsuke Harada et al. · Materials science forum · 2015 · 12 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Tadayoshi Deguchi, Shuji Katakami, Hiroyuki Fujisawa et al. · Materials science forum · 2014 · 10 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

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