H. J. Mattausch

Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel Effects

N. Sadachika, D. Kitamaru, Y. Uetsuji et al. · IEEE Transactions on Electron Devices · 2006 · 52 citations

Engineering, Electrical Engineering, Microelectronics +16

A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis

D. Navarro, Yoichi Takeda, M. Miyake et al. · IEEE Transactions on Electron Devices · 2006 · 46 citations

Engineering, Electrical Engineering, Circuit Theory +16

HiSIM: a drift-diffusion-based advanced MOSFET model for circuit simulation with easy parameter extraction

M. Suetake, Kenichi Suematsu, H. Nagakura et al. · 2002 · 27 citations

Engineering, Electrical Engineering, Microelectronics +16

Reactive ion etching of Ta–silicide/polysilicon double layers for the fabrication of integrated circuits

H. J. Mattausch, B. Hasler, W. Beinvogl · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

MOSFET modeling gets physical

M. Miura–Mattausch, H. J. Mattausch, N.D. Arora et al. · IEEE Circuits and Devices Magazine · 2001 · 19 citations

Engineering, Electrical Engineering, Circuit Theory +16