Y.J. Park

Fabrication of triode-type field emission displays with high-density carbon-nanotube emitter arrays

Jinyong Jung, Y. W. Jin, Jun Hee Choi et al. · Physica B Condensed Matter · 2002 · 98 citations

Engineering, Electrical Engineering, Materials Science +14

Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

J. W. Johnson, A.P. Zhang, Wen-Ben Luo et al. · IEEE Transactions on Electron Devices · 2002 · 95 citations

Engineering, Electrical Engineering, Electronic Materials +16

The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

J.Y. Kim, Chang‐Seok Lee, S.E. Kim et al. · 2003 · 81 citations

Engineering, Electrical Engineering, Electronic Materials +16

An under-gate triode structure field emission display with carbon nanotube emitters

Yong Soo Choi, Ji-Hoon Kang, Y.J. Park et al. · Diamond and Related Materials · 2001 · 63 citations

Engineering, Electrical Engineering, Materials Science +12

Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

Kwang Hyeon Baik, Yoshihiro Irokawa, F. Ren et al. · Solid-State Electronics · 2003 · 43 citations

Engineering, Electrical Engineering, Materials Science +17