S.E. Kim - Concepedia

Author

S.E. Kim

Also Known As

S. E. Kim, S.E. Kim, Satbyul Kim, Seong-Min Kim, SeongRyeol Kim, Sihyeong Kim

Publications

208

Citations

H-Index

Concepts

All Affiliations

S.E. Kim is an author at Samsung (South Korea) specializing in computer engineering, microelectronics, and engineering.

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	175
2	Applied Physics	5	5	175
3	Computer Engineering	5	5	175
4	Electrical Engineering	5	5	175
5	Materials Engineering	1	1	19

S.E. Kim

Publications

185

Citations

H-Index

Page 1

	Year	Citations
The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond J.Y. Kim, Chang‐Seok Lee, S.E. Kim, Non-volatile MemoryElectrical EngineeringData Retention TimeRecess-channel-array TransistorEngineering	2003	81
S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond Young‐Wook Kim, H.J. Oh, D. S. Woo, Electrical EngineeringData Retention TimeEngineeringSemiconductor DeviceElectronic Engineering	2005	38
130 nm-technology, 0.25 ¿m<sup>2</sup>, 1T1C FRAM Cell for SoC (System-on-a-Chip)-friendly Applications Young Ki Hong, Dong-Hoon Jung, Seong-Hoon Kang, Fram CellMb FramEngineeringVlsi DesignMiniaturization	2007	24
A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs D.H. Kim, J.Y. Kim, M. Huh, EngineeringEnhanced Storage NodeUnlimited HeightAdvanced Packaging (Semiconductors)Nanoelectronics	2004	19
An outstanding and highly manufacturable 80nm DRAM technology H.S. Kim, D.H. Kim, J.M. Park, Hardware SecurityElectrical EngineeringEngineeringMicrofabricationNanoelectronics	2004	13
Highly manufacturable process technology for reliable 256 Mbit and 1 Gbit DRAMs H.K. Kang, K.H. Kim, Y.G. Shin,	1994	10

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