S.E. Kim

The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

J.Y. Kim, Chang‐Seok Lee, S.E. Kim et al. · 2003 · 81 citations

Non-volatile Memory, Electrical Engineering, Data Retention Time +12

S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond

Young‐Wook Kim, H.J. Oh, D. S. Woo et al. · 2005 · 38 citations

Electrical Engineering, Data Retention Time, Engineering +12

130 nm-technology, 0.25 ¿m<sup>2</sup>, 1T1C FRAM Cell for SoC (System-on-a-Chip)-friendly Applications

Young Ki Hong, Dong-Hoon Jung, Seong-Hoon Kang et al. · 2007 · 24 citations

Fram Cell, Mb Fram, Engineering +18

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

D.H. Kim, J.Y. Kim, M. Huh et al. · 2004 · 19 citations

Engineering, Enhanced Storage Node, Unlimited Height +19

An outstanding and highly manufacturable 80nm DRAM technology

H.S. Kim, D.H. Kim, J.M. Park et al. · 2004 · 13 citations

Hardware Security, Electrical Engineering, Engineering +12