J.-P. Carrere

New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

J.-P. Carrere, J.-P. Oddou, S. Placé et al. · Solid-State Electronics · 2011 · 24 citations

New Mechanism, Process Optimization, Plasma Processing +2

Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process

J.-P. Carrere, J.C. Oberlin, M. Haond · 2002 · 22 citations

Engineering, Electron-beam Lithography, New Phenomenon +17

Validated 90nm CMOS technology platform with low-k copper interconnects for advanced system-on-chip (SoC)

T. Devoivre, M.M. Lunenborg, C. Julien et al. · 2003 · 16 citations

Engineering, Vlsi Design, Computer Architecture +19

Radiation Effects on CMOS Image Sensors With Sub-2 $\mu{\rm m}$ Pinned Photodiodes

S. Placé, J.-P. Carrere, Stéphane Allegret et al. · IEEE Transactions on Nuclear Science · 2012 · 15 citations

Engineering, Phenomenological Model, Cmos Image Sensors +18

New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

J.-P. Carrere, J.P. Oddou, C. Richard et al. · 2010 · 11 citations

Electrical Engineering, Image Sensor, Cmos Image Sensor +9