2002 · 22 citations · 2 references
EngineeringElectron-beam LithographyNew PhenomenonElectron Current TransientVacuum DeviceChemical DepositionElectron PhysicIcp ChamberNanoelectronicsElectrical EngineeringPhysicsCvd ProcessMicroelectronicsTopographical DependenceSurface ScienceApplied PhysicsGas Discharge PlasmaAntenna AreaPlasma ApplicationElectrical Insulation
This paper presents the influence of topographical parameters such as antenna area, perimeter and aspect ratio, on charging during an ICP oxide deposition process. We show that an extended electron-shading occurs during the beginning of the deposition. Moreover, we present a new phenomenon of drastic damaging when thin oxide layers are deposited. We attribute this to an electron current transient at the wafer dechuck in the ICP chamber.
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