Michael Canonico

Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

Guangrui Xia, Judy L. Hoyt, Michael Canonico · Journal of Applied Physics · 2007 · 50 citations

Engineering, Materials Engineering, Materials Science +17

Strain dependence of Si–Ge interdiffusion in epitaxial Si∕Si1−yGey∕Si heterostructures on relaxed Si1−xGex substrates

Guangrui Xia, Oluwamuyiwa Olubuyide, Judy L. Hoyt et al. · Applied Physics Letters · 2006 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Electron transport in Gate-All-Around uniaxial tensile strained-Si nanowire n-MOSFETs

Pouya Hashemi, Leonardo Gomez, Michael Canonico et al. · 2008 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Through Silicon Via stress characterization

Thuy Dao, Dina H. Triyoso, Mike Petras et al. · 2009 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +14

In0.75Ga0.25As channel layers with record mobility exceeding 12,000cm2/Vs for use in high-κ dielectric NMOSFETs

Ravi Droopad, K. Rajagopalan, J. Abrokwah et al. · Solid-State Electronics · 2006 · 18 citations

Engineering, Electrical Engineering, Materials Science +14