Ryo Arasawa

High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET

Hitoshi Kunitake, Kazuaki Ohshima, Kazuki Tsuda et al. · 2018 · 40 citations

Engineering, Integrated Circuits, Semiconductor Device +17

A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

Hitoshi Kunitake, Ryo Arasawa, Takako Seki et al. · IEEE Journal of the Electron Devices Society · 2019 · 36 citations · Full text

Non-volatile Memory, Engineering, Emerging Memory Technology +18

Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory

Yoshiyuki Kobayashi, Daisuke Matsubayashi, Shuhei Nagatsuka et al. · 2014 · 20 citations

Materials Science, Electrical Engineering, Novel Fets +14

P‐143: Possibility of Reflective LC Display Using Oxide Semiconductor TFTs as Electronic Paper Display

Takeshi Nishi, Koji Moriya, Shuji Fukai et al. · SID Symposium Digest of Technical Papers · 2010 · 16 citations

Oxide Semiconductor Tfts, Electrical Engineering, Optical Materials +12

Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor

Yoshiyuki Kobayashi, Daisuke Matsubayashi, Suguru Hondo et al. · IEEE Electron Device Letters · 2015 · 15 citations

Electrical Characteristics, Wide-bandgap Semiconductor, Electrical Engineering +12