Shuhei Nagatsuka - Concepedia

Author

Shuhei Nagatsuka

Semiconductor Energy Laboratory (Japan)

Also Known As

S. Nagatsuka, Shuhei Nagatsuka, Takayuki Ikeda

Publications

343

Citations

H-Index

Concepts

All Affiliations

Semiconductor Energy Laboratory (Japan)

About

Shuhei Nagatsuka is an author at Semiconductor Energy Laboratory (Japan) specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	141
2	Electrical Engineering	6	6	141
3	Applied Physics	4	4	104
4	Computer Engineering	4	4	99
5	Materials Science	1	1	20

Shuhei Nagatsuka

Publications

251

Citations

H-Index

Page 1

	Year	Citations
Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, IEEE Journal of Solid-State Circuits	2012	99
DRAM Using Crystalline Oxide Semiconductor for Access Transistors and Not Requiring Refresh for More Than Ten Days Tomoaki Atsumi, Shuhei Nagatsuka, Hideko Inoue, Non-volatile MemoryEngineeringComputer ArchitectureRequiring RefreshNanoelectronics	2012	37
1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor Takanori Matsuzaki, Hiroki Inoue, Shuhei Nagatsuka, Non-volatile MemoryOxide SemiconductorMemory DesignEngineeringEmerging Memory Technology	2011	25
A 140 MHz 1 Mbit 2T1C gain-cell memory with 60-nm indium-gallium-zinc oxide transistor embedded into 65-nm CMOS logic process technology Takahiko Ishizu, Shuhei Nagatsuka, Momoyo Yamaguchi, EngineeringMemory DesignEmerging Memory TechnologyMbit MacroGain Cell	2017	24
A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT Shuhei Nagatsuka, Takanori Matsuzaki, Hiroki Inoue, Reading CircuitNon-volatile MemoryElectrical EngineeringEngineeringPhysics	2013	22
Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory Yoshiyuki Kobayashi, Daisuke Matsubayashi, Shuhei Nagatsuka, Materials ScienceElectrical EngineeringNovel FetsEngineering50-Nm C-axis	2014	20
(Invited) Embedded Oxide Semiconductor Memories: A Key Enabler for Low-Power ULSI Takahiko Ishizu, Tatsuya Onuki, Shuhei Nagatsuka, ECS Transactions Non-volatile MemoryEngineeringEmerging Memory TechnologyLow-power UlsiComputer Architecture	2017	13
Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using<i>c</i>-axis aligned crystalline oxide semiconductor transistor with<i>L</i>of 60 nm Tatsuya Onuki, Kiyoshi Katō, Masumi Nomura, Japanese Journal of Applied Physics	2015	11

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