Shuhei Nagatsuka

Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor

Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka et al. · IEEE Journal of Solid-State Circuits · 2012 · 99 citations

DRAM Using Crystalline Oxide Semiconductor for Access Transistors and Not Requiring Refresh for More Than Ten Days

Tomoaki Atsumi, Shuhei Nagatsuka, Hideko Inoue et al. · 2012 · 37 citations

Non-volatile Memory, Engineering, Computer Architecture +17

1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor

Takanori Matsuzaki, Hiroki Inoue, Shuhei Nagatsuka et al. · 2011 · 25 citations

Non-volatile Memory, Oxide Semiconductor, Memory Design +18

A 140 MHz 1 Mbit 2T1C gain-cell memory with 60-nm indium-gallium-zinc oxide transistor embedded into 65-nm CMOS logic process technology

Takahiko Ishizu, Shuhei Nagatsuka, Momoyo Yamaguchi et al. · 2017 · 24 citations

Engineering, Memory Design, Emerging Memory Technology +17

A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT

Shuhei Nagatsuka, Takanori Matsuzaki, Hiroki Inoue et al. · 2013 · 22 citations

Reading Circuit, Non-volatile Memory, Electrical Engineering +15