Daisuke Matsubayashi

Author

Semiconductor Energy Laboratory (Japan)ORCID

Also Known As

D. MATSUBAYASHI, D. Matsubayashi, Daisuke Matsubayashi, Matsubayashi, D., Matsubayashi, Daisuke

Publications

541

Citations

H-Index

Concepts

All Affiliations

Semiconductor Energy Laboratory (Japan)The University of Tokyo

About

Daisuke Matsubayashi is an author at Semiconductor Energy Laboratory (Japan) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	328
2	Applied Physics	11	12	291
3	Computer Engineering	6	6	115
4	Natural Sciences	1	1	25
5	Computer Science	1	1	11

Daisuke Matsubayashi

Publications

478

Citations

H-Index

Page 1

	Year	Citations
Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor Hiroki Inoue, Takanori Matsuzaki, Shuhei Nagatsuka, IEEE Journal of Solid-State Circuits	2012	99
20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current Daisuke Matsubayashi, Y. Asami, Yutaka Okazaki, Materials ScienceSemiconductor TechnologyElectrical EngineeringCaac-igzo FetsEngineering	2015	48
Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length Yoshiyuki Kobayashi, Shinpei Matsuda, Daisuke Matsubayashi, Japanese Journal of Applied Physics SemiconductorsElectrical CharacteristicsElectrical EngineeringElectronic DevicesEngineering	2014	38
Single crystalline In–Ga–Zn oxide films grown from c-axis aligned crystalline materials and their transistor characteristics Yoshinori Yamada, Daisuke Matsubayashi, Shinpei Matsuda, Japanese Journal of Applied Physics	2014	37
30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics Shinpei Matsuda, T. Hiramatsu, R. Honda, Crystalline In-ga-zn-o TransistorsWide-bandgap SemiconductorElectrical EngineeringDielectric AnisotropyEngineering	2015	35
Spin splitting and Kondo effect in quantum dots coupled to noncollinear ferromagnetic leads Daisuke Matsubayashi, Mikio Eto Physical Review B EngineeringSpin SystemsKondo TemperatureSpintronic MaterialSpin Dynamic	2007	25
1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor Takanori Matsuzaki, Hiroki Inoue, Shuhei Nagatsuka, Non-volatile MemoryOxide SemiconductorMemory DesignEngineeringEmerging Memory Technology	2011	25
A 140 MHz 1 Mbit 2T1C gain-cell memory with 60-nm indium-gallium-zinc oxide transistor embedded into 65-nm CMOS logic process technology Takahiko Ishizu, Shuhei Nagatsuka, Momoyo Yamaguchi, EngineeringMemory DesignEmerging Memory TechnologyMbit MacroGain Cell	2017	24
Performance boost of crystalline In-Ga-Zn-O material and transistor with extremely low leakage for IoT normally-off CPU application Shao Hui Wu, XY Jia, Xiang Li, Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryComputer Architecture	2017	22
Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory Yoshiyuki Kobayashi, Daisuke Matsubayashi, Shuhei Nagatsuka, Materials ScienceElectrical EngineeringNovel FetsEngineering50-Nm C-axis	2014	20

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