20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current

Abstract

In this study, we proposed scalable trench-gate-self-aligned (TGSA) c-axis aligned crystalline In-Ga-Zn-Oxide field effect transistors (CAAC-IGZO FETs) formed by only three masks. We demonstrated that the 20-nm-node FETs with 11-nm-EOT exhibit good short-channel properties, high frequency, and low off-state current. The TGSA FETs can be candidates for key devices to realize super low power large-scale integration technology such as the Internet of Things.