Yuto Yakubo

20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current

Daisuke Matsubayashi, Y. Asami, Yutaka Okazaki et al. · 2015 · 48 citations

Engineering, Electrical Engineering, Materials Science +10

Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory

Yoshiyuki Kobayashi, Daisuke Matsubayashi, Shuhei Nagatsuka et al. · 2014 · 20 citations

Engineering, Electrical Engineering, Materials Science +16

A 48 MHz 880-nW Standby Power Normally-Off MCU with 1 Clock Full Backup and 4.69-μs Wakeup Featuring 60-nm Crystalline In–Ga–Zn Oxide BEOL-FETs

Takahiko Ishizu, Yuto Yakubo, Kazuma Furutani et al. · 2019 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17

Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using<i>c</i>-axis aligned crystalline oxide semiconductor transistor with<i>L</i>of 60 nm

Tatsuya Onuki, Kiyoshi Katō, Masumi Nomura et al. · Japanese Journal of Applied Physics · 2015 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +14

A 20ns-write 45ns-read and 10¹⁴-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors

Shuhei Maeda, Satoru Ohshita, Kazuma Furutani et al. · 2018 · 11 citations

Engineering, Computer Engineering, Computer Science +17