P.J. Wilding

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

T. Ashley, L. Buckle, Suman Datta et al. · Electronics Letters · 2007 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

M. Radosavljević, T. Ashley, A. D. Andreev et al. · 2008 · 100 citations

Engineering, Electrical Engineering, Materials Science +15

Novel insb-based quantum well transistors for ultra-high speed, low power logic applications

T. Ashley, A.R. Barnes, L. Buckle et al. · 2005 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

Surface Induced Instabilities in 4H-SiC Microwave MESFETs

Keith P. Hilton, Michael J. Uren, D.G. Hayes et al. · Materials science forum · 2000 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

Julie Orr, P. D. Buckle, M. Fearn et al. · Semiconductor Science and Technology · 2006 · 19 citations

Engineering, Electrical Engineering, Materials Science +17