Kimitoshi Okano

Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels

Toshifumi Irisawa, Kimitoshi Okano, Takuya Horiuchi et al. · IEEE Transactions on Electron Devices · 2009 · 24 citations

Short-channel Device Characteristics, Wide-bandgap Semiconductor, Engineering +16

Direct evaluation of DC characteristic variability in FinFET SRAM Cell for 32 nm node and beyond

S. Inaba, Hirohisa Kawasaki, Kimitoshi Okano et al. · 2007 · 16 citations

Device Modeling, Electrical Engineering, Finfet Sram +15

Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture

Shosuke Fujii, Keiji Ikeda, Kei Sakamoto et al. · 2024 · 16 citations

Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor

T. Izumida, Kimitoshi Okano, Takahisa Kanemura et al. · Japanese Journal of Applied Physics · 2011 · 13 citations

Device Modeling, Electrical Engineering, Ion Implantation +12