Mark Raymond

Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

Hiroaki Niimi, Zuoguang Liu, Oleg Gluschenkov et al. · IEEE Electron Device Letters · 2016 · 58 citations

Engineering, Electrical Engineering, Materials Science +15

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Zhen Zhang, Siyuranga O. Koswatta, Stephen W. Bedell et al. · IEEE Electron Device Letters · 2013 · 54 citations

Engineering, Electrical Engineering, Materials Science +16

The Emergence of Contention in Global Internet Governance

Samantha Bradshaw, Laura DeNardis, Fen Osler Hampson et al. · SSRN Electronic Journal · 2015 · 43 citations · Full text

Social Sciences, Cybersecurity, International Relations +17

Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study

Nicholas A. Lanzillo, Hemant Dixit, Erik Milosevic et al. · Journal of Applied Physics · 2018 · 37 citations

Natural Sciences, Materials Science, Physics +17

Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer

Dina H. Triyoso, Rama I. Hegde, Jack Jiang et al. · IEEE Electron Device Letters · 2008 · 30 citations

Natural Sciences, Materials Engineering, Materials Science +14