Natsuki Yokoyama

Process and device technologies for 1 Gbit dynamic random-access memory cells

T. Kaga, M. Ohkura, Fumio Murai et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 32 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

Normally-off SiC-JFET inverter with low-voltage control and a high-speed drive circuit

K Ishikawa, Hidekatsu Onose, Yasuo Onose et al. · 2007 · 23 citations

Sic Modules, Electrical Engineering, Low-voltage Control +12

Influence of Lateral Spreading of Implanted Aluminum Ions and Implantation-Induced Defects on Forward Current–Voltage Characteristics of 4H-SiC Junction Barrier Schottky Diodes

Kazuhiro Mochizuki, Norifumi Kameshiro, Hidekatsu Onose et al. · IEEE Transactions on Electron Devices · 2009 · 21 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +12

Controllability of switching speed and loss for SiC JFET/Si MOSFET cascode with external gate resistor

Haruka Shimizu, S Akiyama, Natsuki Yokoyama et al. · 2014 · 18 citations

Conventional Gate Resistor, Electrical Engineering, Switching Loss +10

Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations Through $\hbox{SiO}_{2}$ Layers Into 4H-SiC

Kazuhiro Mochizuki, T. Someya, Takahama Takashi et al. · IEEE Transactions on Electron Devices · 2008 · 14 citations

Materials Engineering, Materials Science, Electrical Engineering +15