Snežana Golubović - Concepedia

Author

Snežana Golubović

University of Nis

Also Known As

S. Tosic Golubovic, S.T.G. Tosic Golubovic, Snezana Golubovic, Snežana Golubović

Publications

466

Citations

H-Index

Concepts

All Affiliations

University of Nis Serbian Academy of Sciences and Arts

About

Snežana Golubović is an author at University of Nis specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	390
2	Electrical Engineering	9	9	390
3	Microelectronics	9	9	390
4	Applied Physics	8	8	374
5	Physics	1	1	227

Snežana Golubović

Publications

400

Citations

H-Index

Page 1

	Year	Citations
NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors V. Davidović, Danijel Danković, Aleksandar Ilić, IEEE Transactions on Nuclear Science Consecutive IrradiationElectrical EngineeringNegative Bias TemperatureEngineeringPhysics	2016	227
Sensitivity and fading of pMOS dosimeters with thick gate oxide Goran Ristić, Snežana Golubović, Momčilo M. Pejović Sensors and Actuators A Physical Electrical EngineeringEngineeringOxide ElectronicsBias Temperature InstabilityApplied Physics	1995	51
<i>P</i>-channel metal–oxide–semiconductor dosimeter fading dependencies on gate bias and oxide thickness Goran Ristić, Snežana Golubović, Momčilo M. Pejović Applied Physics Letters Semiconductor TechnologyElectrical EngineeringThreshold Voltage RecoveryEngineeringOxide Semiconductors	1995	29
Impact of Negative Bias Temperature Instabilities on Lifetime in p-channel Power VDMOSFETs N. Stojadinović, Danijel Danković, I. Manić, Device ModelingThreshold Voltage InstabilitiesElectrical EngineeringExtrapolation ModelEngineering	2007	17
Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation Danijel Danković, I. Manić, Aneta Prijić, Semiconductor Science and Technology Bias ConditionsElectrical EngineeringEngineeringElectronic EngineeringBias Temperature Instability	2015	16
NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs V. Davidović, Danijel Danković, Snežana Golubović, Facta universitatis - series Electronics and Energetics Electrical EngineeringEngineeringNbt Stress EffectsNanoelectronicsElectronic Engineering	2018	15
Annealing of radiation-induced defects in burn-in stressed power VDMOSFETs S. Djoric-Veljković, I. Manić, V. Davidović, Nuclear Technology and Radiation Protection Defect ToleranceElectrical EngineeringN-channel Power VdmosfetsEngineeringNanoelectronics	2011	13
Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors V. Davidović, N. Stojadinović, Danijel Danković, Japanese Journal of Applied Physics Stress-induced InstabilitiesSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage Current	2008	11
Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET Danijel Danković, N. Stojadinović, Zoran Prijić, Chinese Physics B EngineeringPower ElectronicsSemiconductor DeviceOxide ChargeElectronic Engineering	2015	11
Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors V. Davidović, Danijel Danković, Aleksandar Ilić, Japanese Journal of Applied Physics	2018	10

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