Snežana Golubović

NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

V. Davidović, Danijel Danković, Aleksandar Ilić et al. · IEEE Transactions on Nuclear Science · 2016 · 227 citations

Engineering, Electrical Engineering, Electronic Materials +16

Sensitivity and fading of pMOS dosimeters with thick gate oxide

Goran Ristić, Snežana Golubović, Momčilo M. Pejović · Sensors and Actuators A Physical · 1995 · 52 citations

Engineering, Electrical Engineering, Materials Science +14

<i>P</i>-channel metal–oxide–semiconductor dosimeter fading dependencies on gate bias and oxide thickness

Goran Ristić, Snežana Golubović, Momčilo M. Pejović · Applied Physics Letters · 1995 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Negative Bias Temperature Instabilities on Lifetime in p-channel Power VDMOSFETs

N. Stojadinović, Danijel Danković, I. Manić et al. · 2007 · 17 citations

Engineering, Electrical Engineering, Electronic Materials +16

Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation

Danijel Danković, I. Manić, Aneta Prijić et al. · Semiconductor Science and Technology · 2015 · 16 citations

Engineering, Electrical Engineering, Microelectronics +13