<i>P</i>-channel metal–oxide–semiconductor dosimeter fading dependencies on gate bias and oxide thickness

Abstract

The threshold voltage recovery (‘‘fading’’) of P-channel metal–oxide–semiconductor dosimeters irradiated to 10 Gy(Si), after 3500 h room-temperature annealing, has been investigated. The obtained results have shown that fading decreases with the increase of the absolute value of gate voltage as well as with the increase of gate oxide thickness.