Hsuan-Yu Lin

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

Wei-Chih Chien, Y.C. Chen, Erh-Kun Lai et al. · IEEE Electron Device Letters · 2010 · 109 citations

Natural Sciences, Electrical Engineering, Materials Science +17

High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme

Chau-Neng Wu, Dongyang Lin, A. Keshavarzi et al. · 2010 · 106 citations

Engineering, Electrical Engineering, Microelectronics +16

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

Wei-Chih Chien, Y. C. Chen, Erh-Kun Lai et al. · Applied Physics A · 2011 · 22 citations

Engineering, Materials Engineering, Materials Science +16

High crystalline quality ZnSe films grown by pulsed laser deposition

Ming-Yau Chern, Hsuan-Yu Lin, Cebao Fang et al. · Applied Physics Letters · 1995 · 16 citations

Engineering, Materials Engineering, Materials Science +17