A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM - Concepedia

Concepedia

Publication | Closed Access

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

21

Citations

11

References

2011

Year

Wei-Chih Chien, Y. C. Chen, Erh-Kun Lai, Feng-Ming Lee, Yu‐Yu Lin, Alfred T. H. Chuang, K. P. Chang, Y. D. Yao, T.H. Chou, Hsuan-Yu Lin,

Applied Physics A

Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringCmos Compatible TungstenNanoelectronicsOxide ElectronicsElectrode MaterialApplied PhysicsSwitching MechanismSemiconductor Device FabricationMicroelectronics

References

	Year	Citations

Page 1

Page 1