Luciano M. Almeida

Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

M. Aoulaiche, Talitha Nicoletti, Luciano M. Almeida et al. · IEEE Transactions on Electron Devices · 2012 · 30 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM

Luciano M. Almeida, K. R. A. Sasaki, C. Caillat et al. · Solid-State Electronics · 2013 · 29 citations

Engineering, Machine Learning, Pattern Recognition +9

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

Talitha Nicoletti, Marc Aoulaiche, Luciano M. Almeida et al. · IEEE Electron Device Letters · 2012 · 28 citations

Electrical Engineering, Gate Length, Engineering +15

Dependence of Generation–Recombination Noise With Gate Voltage in FD SOI MOSFETs

Abraham Luque Rodríguez, J. A. Jiménez-Tejada, Luciano M. Almeida et al. · IEEE Transactions on Electron Devices · 2012 · 26 citations

Device Modeling, Electrical Engineering, Fd Soi Mosfets +15

Zero Temperature Coefficient behavior for advanced MOSFETs

João Antônio Martino, Vinicius Amaro Chagas Mesquita, Christian Nemeth Macambira et al. · 2016 · 21 citations · Full text

Device Modeling, Low-power Electronics, Electrical Engineering +15