Talitha Nicoletti

Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

M. Aoulaiche, Talitha Nicoletti, Luciano M. Almeida et al. · IEEE Transactions on Electron Devices · 2012 · 30 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering

Talitha Nicoletti, Marc Aoulaiche, Luciano M. Almeida et al. · IEEE Electron Device Letters · 2012 · 28 citations

Electrical Engineering, Gate Length, Engineering +15

On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

Sara Dereste dos Santos, Talitha Nicoletti, João Antônio Martino et al. · IEEE Transactions on Electron Devices · 2012 · 21 citations

Electrical Engineering, Engineering, Rf Semiconductor +13

The impact of gate length scaling on UTBOX FDSOI devices: The digital/analog performance of extension-less structures

Talitha Nicoletti, Sara Dereste dos Santos, Luciana O. Almeida et al. · 2012 · 16 citations

Utbox Fdsoi Devices, Dc Measurements, Engineering +19

Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

K. R. A. Sasaki, Talitha Nicoletti, Luciano M. Almeida et al. · Solid-State Electronics · 2014 · 10 citations

Electrical Engineering, Engineering, Computer Engineering +3