Yongju Zheng

4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping

Yongju Zheng, Tamara Isaacs‐Smith, A. C. Ahyi et al. · IEEE Electron Device Letters · 2017 · 17 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Suman Das, Yongju Zheng, A. C. Ahyi et al. · Materials · 2022 · 17 citations · Full text

Engineering, Electrical Engineering, Physics +17

Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp Tests

Yongju Zheng, Rahul Potera, Tony Witt · 2021 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

A. C. Ahyi, Aaron Modic, C. Jiao et al. · Materials science forum · 2015 · 14 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Analysis of the electronic and chemical structure in boron and phosphorus passivated <i>4H</i>-SiC/SiO2 interfaces using HRTEM and STEM-EELS

Joshua A. Taillon, Christopher J. Klingshirn, C. Jiao et al. · Applied Physics Letters · 2018 · 11 citations

Engineering, Materials Engineering, Materials Science +17