Concepedia

Y. F. Hsieh

YF

Statistics

Publications

2

Citations

87

H-Index

2

Active since

1991

Affiliations

AT&T (United States)(Current)

Y. F. Hsieh is an author at AT&T (United States) specializing in materials science, crystalline defects, and applied physics.

Top concepts

EngineeringApplied PhysicsMaterial ScienceCrystalline DefectsThin FilmsMicrostructureSemiconductorsElectrical EngineeringSemiconductor Materials

Publications per year

1991–1991

2

Publications

2

Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

M. L. Green, B. E. Weir, D. Brasen et al. · Journal of Applied Physics · 1991 · 71 citations

Engineering, Semiconductor Materials, Semiconductor Device +17

Structural damage induced by Ga+ focused ion beam implantation in (001) Si

C. H. Chu, Y. F. Hsieh, L. R. Harriott et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 16 citations

Materials Science, Ga+ Fib, Ion Implantation +14

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