Jiayang Zhang

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Zhuoqing Yu, Jiayang Zhang, Runsheng Wang et al. · 2017 · 71 citations

Device Modeling, Electrical Engineering, Engineering +12

Hot Carrier Degradation-Induced Dynamic Variability in FinFETs: Experiments and Modeling

Zhuoqing Yu, Zixuan Sun, Runsheng Wang et al. · IEEE Transactions on Electron Devices · 2020 · 31 citations

Device Modeling, Hcd Variability, Electrical Engineering +13

Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis

Zuodong Zhang, Runsheng Wang, Xuguang Shen et al. · IEEE Transactions on Electron Devices · 2021 · 27 citations

Hardware Security, Reliability, Electrical Engineering +15

Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress

Zixuan Sun, Zhuoqing Yu, Zhe Zhang et al. · IEEE Electron Device Letters · 2019 · 25 citations

Engineering, Charge Transport, Semiconductor Device +16

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part I: Experiments and Analysis

Zixuan Sun, Zirui Wang, Runsheng Wang et al. · IEEE Transactions on Electron Devices · 2023 · 20 citations

Electrical Engineering, Engineering, Hardware Reliability +14