Zhuoqing Yu

High-speed black phosphorus field-effect transistors approaching ballistic limit

Xuefei Li, Zhuoqing Yu, Xiong Xiong et al. · Science Advances · 2019 · 89 citations · Full text

Engineering, Materials Science, Physics +17

New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability

Zhuoqing Yu, Jiayang Zhang, Runsheng Wang et al. · 2017 · 73 citations

Engineering, Electrical Engineering, Analog Electronics +16

Variability-and reliability-aware design for 16/14nm and beyond technology

Ru Huang, Xiaobo Jiang, Shuren Guo et al. · 2017 · 37 citations

Engineering, Computer Engineering, Electrical Engineering +17

On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)

Zhuoqing Yu, Zhe Zhang, Zixuan Sun et al. · IEEE Transactions on Electron Devices · 2020 · 35 citations

Engineering, Materials Science, Electronic Materials +16

Understanding Hot Carrier Reliability in FinFET Technology from Trap-based Approach

Runsheng Wang, Zixuan Sun, Yue‐Yang Liu et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 34 citations

Engineering, Electrical Engineering, Electronic Materials +16