Sheng‐Kai Su

Layered Semiconducting 2D Materials for Future Transistor Applications

Sheng‐Kai Su, Chih‐Piao Chuu, Mingyang Li et al. · Small Structures · 2021 · 153 citations

Engineering, Materials Engineering, Materials Science +16

First Demonstration of GAA Monolayer-MoS₂ Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 75 citations

Engineering, Electrical Engineering, Materials Science +12

Ge CMOS gate stack and contact development for Vertically Stacked Lateral Nanowire FETs

M.J.H. van Dal, G. Vellianitis, G. Doornbos et al. · 2018 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping

Zichen Zhang, M. Passlack, Gregory Pitner et al. · Nature Electronics · 2023 · 38 citations

Engineering, Electrical Engineering, Materials Science +15

Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length

Gregory Pitner, Zichen Zhang, Qing Lin et al. · 2020 · 34 citations

Engineering, Electrical Engineering, Materials Science +17