M.-R. Lin

Transistors with dual work function metal gates by single full silicidation (FUSI) of polysilicon gates

W. Maszara, Zoran Krivokapić, P King et al. · 2003 · 72 citations

Engineering, Electrical Engineering, Electronic Materials +14

Predicting CMOS speed with gate oxide and voltage scaling and interconnect loading effects

K. Chen, Chenming Hu, Peng Fang et al. · IEEE Transactions on Electron Devices · 1997 · 63 citations

Engineering, Computer Engineering, Electrical Engineering +17

Hot carrier effects in nMOSFETs in 0.1 μm CMOS technology

E. Li, Elyse Rosenbaum, J. Tao et al. · 2003 · 47 citations

Engineering, Electrical Engineering, Microelectronics +16

Nickel silicide metal gate FDSOI devices with improved gate oxide leakage

Zoran Krivokapić, W. Maszara, K. Achutan et al. · 2003 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

FinFETs - Technology and circuit design challenges

W. Maszara, M.-R. Lin · 2013 · 34 citations

Engineering, Computer Engineering, Electrical Engineering +17