2003 · 38 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsNanoelectronicsOxide SemiconductorsSemiconductor Device MaterialsElectron MobilityGate LeakageGate Leakage CurrentGate Oxide LeakageGate Oxide Leakage ReductionGate OxidesLeakage Current ReductionMetal Gates
Fully depleted SOI (FDSOI) devices with undoped channel require metal gates to achieve correct threshold voltages. We demonstrate metal gate FDSOI devices using NiSi gates with symmetric V/sub t/ for both NMOS and PMOS devices. Metal gates are stable on 2 nm gate oxide and show capacitance equivalent gate oxide thickness (CET) 0.6 nm thinner than poly gates. The gate leakage current is up to two orders of magnitude lower and high mobility is achieved (peak electron mobility 670 cm/sup 2//Vs and 170 cm/sup 2//Vs for holes).
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