Yueh‐Chin Lin

Normally-OFF GaN MIS-HEMT With F⁻ Doped Gate Insulator Using Standard Ion Implantation

Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc et al. · IEEE Journal of the Electron Devices Society · 2018 · 50 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Tien‐Tung Luong, Franky Lumbantoruan, Yen‐Yu Chen et al. · physica status solidi (a) · 2017 · 46 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm² Specific On-Resistance for Power Device Applications

Chia-Hsun Wu, Jianyou Chen, Ping-Cheng Han et al. · IEEE Transactions on Electron Devices · 2019 · 34 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

Shih Chien Liu, Yuen‐Yee Wong, Yueh‐Chin Lin et al. · ECS Transactions · 2014 · 10 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13