Kan-Hsueh Tsai

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

S. Z. Rahaman, Yu-De Lin, Heng-Yuan Lee et al. · Langmuir · 2017 · 69 citations

Engineering, Electrical Engineering, Materials Science +15

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2014 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics

Yu-De Lin, Pang-Shiu Chen, Heng-Yuan Lee et al. · Nanoscale Research Letters · 2017 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

28-nm 2T High-<formula formulatype="inline"><tex Notation="TeX">$K$</tex></formula> Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Wen Chao Shen, Chun Hsiung Wu, Yue‐Der Chih et al. · IEEE Electron Device Letters · 2013 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +17

A nonvolatile look-up table using ReRAM for reconfigurable logic

Wen-Pin Lin, Shyh-Shyuan Sheu, Chia-Chen Kuo et al. · 2014 · 14 citations

Engineering, Computer Engineering, Electrical Engineering +16