N. Nagashima

Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation

H. Tsuno, Kenichi Anzai, Masao Matsumura et al. · 2007 · 61 citations

Device Modeling, Gate Space Dependence, Electrical Engineering +15

High performance CMOSFET technology for 45nm generation and scalability of stress-induced mobility enhancement technique

A. Oishi, Osamu Fujii, T. Yokoyama et al. · 2005 · 42 citations

Low-power Electronics, Electrical Engineering, Technology Cmosfet +14

Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design

T. Komoda, A. Oishi, T. Sanuki et al. · 2005 · 41 citations

Mobility Improvement, Electrical Engineering, Gc Liner-sin +9

Self-balancing resistance ratio bridge using a cryogenic current comparator

J. Kinoshita, Katsuya Inagaki, Chikako Yamanouchi et al. · IEEE Transactions on Instrumentation and Measurement · 1989 · 35 citations

Electrical Engineering, Bridge Design, Engineering +9

Quantized Hall resistance measurements

Shinji Kawaji, N. Nagashima, Naoya Kikuchi et al. · IEEE Transactions on Instrumentation and Measurement · 1989 · 27 citations

Quantum Science, Electrical Engineering, Engineering +11