Li-Chuan Sun

Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Tsung‐Ming Tsai, Chun-Chu Lin, Wen‐Chung Chen et al. · Journal of Alloys and Compounds · 2020 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO₂/TiN Resistive Random Access Memory

Kuan‐Ju Zhou, Ting‐Chang Chang, Chih‐Yang Lin et al. · IEEE Electron Device Letters · 2019 · 21 citations

Natural Sciences, Materials Science, Physics +17

Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory

Shih‐Kai Lin, Cheng-Hsien Wu, Ting‐Chang Chang et al. · IEEE Transactions on Electron Devices · 2021 · 19 citations

Engineering, Materials Engineering, Materials Science +14

Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors

Yu‐Hsuan Yeh, Ting‐Chang Chang, Wei‐Chen Huang et al. · Journal of Physics D Applied Physics · 2021 · 14 citations

Engineering, Electrical Engineering, Materials Science +17