Wei‐Chen Huang - Concepedia

Author

Wei‐Chen Huang

National Sun Yat-sen University ORCID

Also Known As

Huang, Wei-Chen, Wei-Chen Huang, Weichen Huang, Wei‐Chen Huang

Publications

314

Citations

H-Index

Concepts

All Affiliations

National Sun Yat-sen University National Yang Ming Chiao Tung University Republic of China Naval Academy National Tsing Hua University Xidian University

About

Wei‐Chen Huang is an author at National Sun Yat-sen University specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	137
2	Electrical Engineering	6	6	137
3	Applied Physics	4	4	102
4	Computer Engineering	2	2	35
5	Materials Engineering	1	1	37

Wei‐Chen Huang

Publications

230

Citations

H-Index

Page 1

	Year	Citations
The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector Chun-Kuei Chen, Chih‐Yang Lin, Po‐Hsun Chen, IEEE Transactions on Electron Devices EngineeringEmerging Memory TechnologyVanadium FilamentOxide/vanadium RatioOptical Properties	2018	37
Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory Yi‐Ting Tseng, I-Chieh Chen, Ting‐Chang Chang, Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringSwitching TimeCorrosion	2018	34
Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory Ting‐Chang Chang, Kan‐Hao Xue, Yu‐Ting Su, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringEngineeringVlsi DesignComputer Engineering	2018	25
Ultrastretchable, Ultralow Hysteresis, High-Toughness Hydrogel Strain Sensor for Pressure Recognition with Deep Learning Wei‐Chen Huang, Xi Wang, Fanchen Luo, ACS Applied Materials & Interfaces	2024	25
Investigation on the current conduction mechanism of HfZrO <sub>x</sub> ferroelectric memory Wen‐Chung Chen, Yong‐Ci Zhang, Po‐Hsun Chen, Journal of Physics D Applied Physics	2020	20
Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory Shih‐Kai Lin, Cheng-Hsien Wu, Ting‐Chang Chang, IEEE Transactions on Electron Devices Indium Oxide LayerNon-volatile MemoryEngineeringMemory DesignMemory Characteristics	2021	18
Completely Flexible Self-Powered Pressure Sensor Based on Electrospinning and Electrochemical Reaction for Dynamic/Static Stimuli Detecting Xuanmo Zhao, Ying Li, Kedi Chen, ACS Sensors	2025	15
Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistors Yu‐Hsuan Yeh, Ting‐Chang Chang, Wei‐Chen Huang, Journal of Physics D Applied Physics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineering	2021	13
Improving High Resistance State in One-Transistor-One-Resistor (1T1R) Structure Resistance Random Access Memory With a Body-Biased Method Po‐Hsun Chen, Yu‐Ting Su, Wei‐Chen Huang, IEEE Transactions on Electron Devices	2023	12
Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process Yong‐Ci Zhang, Xiaohua Ma, Yue Hao, IEEE Transactions on Electron Devices	2019	11

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