Yong‐Ci Zhang

Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory

Tsung‐Ming Tsai, Chun-Chu Lin, Wen‐Chung Chen et al. · Journal of Alloys and Compounds · 2020 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Investigation on the current conduction mechanism of HfZrO _x ferroelectric memory

Wen‐Chung Chen, Yong‐Ci Zhang, Po‐Hsun Chen et al. · Journal of Physics D Applied Physics · 2020 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +16

Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory

Shih‐Kai Lin, Cheng-Hsien Wu, Ting‐Chang Chang et al. · IEEE Transactions on Electron Devices · 2021 · 19 citations

Engineering, Materials Engineering, Materials Science +14

Performance Improvement by Modifying Deposition Temperature in HfZrO_<i>x</i> Ferroelectric Memory

Wen‐Chung Chen, Yung‐Fang Tan, Shih‐Kai Lin et al. · IEEE Transactions on Electron Devices · 2021 · 12 citations

Natural Sciences, Materials Engineering, Materials Science +17

Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process

Yong‐Ci Zhang, Xiaohua Ma, Yue Hao et al. · IEEE Transactions on Electron Devices · 2019 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +10